国家/地区 韩国（3） 美国（3） 世界知识产权组织（3） 欧洲专利局（EPO）（2）
IPC部 B（3）
IPC大类 B82（3）
IPC小类 B82Y（3） C01B（3） C08J（2）
IPC B82Y030/00（3）
发明人 KIM S H（2）
公开年 2012（2）
申请年 2012（3）
专利权人

Manufacture of graphene oxide reduced material for forming electrode for silicon-based semiconductor, involves synthesizing graphite oxide flakes from graphite flakes and forming graphene oxide dispersion solution.

JEONG S, LEE G, HAN J, JEONG H, KIM S, HAN J T, JEONG H J, JEONG S Y, KIM S H, LEE G W

Composite material is formed by base material comprising resin, and graphene-like carbon material which covers at least one portion of surface of base material.

IHARA H, NAKASUGA A, NOZATO S, TAKAFUJI M, GANAPATHY H S, TAKATO M, GANAPASE H S

Manufacture of graphene fiber used for e.g. super capacitor, involves preparing dispersion liquid by dispersing graphene with surfactant in solvent, and preparing composite fiber by mixing dispersion liquid, wet-spinning and drying.

KIM S J, SHIN M K, KIM S H, JEONG K S, KYOON S M, HYEONG K S