国家/地区 中国（3）
IPC部 C（3）
IPC大类 C01（3） H01（2）
IPC小类 C01B（3）
IPC C01B031/04（2） C01B032/184（2）
发明人 ZHANG C（3）
公开年
申请年
专利权人 UNIV TSINGHU.（2）

Preparing patterned graphene, comprises forming accommodating passage in silicon carbide base, providing catalyst and insulating substrate, placing catalyst in accommodating passage, and placing sandwich structure in heating device.

GAO B, ZHANG C, GU J, WU T, ZHU H

Preparing graphene comprises providing graphite monoxide powder, placing graphite oxide powder into solvent and then heat treating to prepare graphene oxide dispersion liquid, introducing hydrogen sulfide gas of the graphene and reacting.

KANG F, LI B, LV W, TAO Y, WEI W, YANG Q, ZHANG C, ZHENG X

Preparing graphene porous carbon material, comprises e.g. adding graphene-based component or mixture of graphene based component and auxiliary component in solvent to disperse, and placing the obtained original sol in reactor for reacting.

KANG F, LI B, LV W, TAO Y, YANG Q, YOU C, ZHANG C, HONG F, YAO Y