国家/地区 KR（2）
IPC部 B（2）
IPC大类 B01（2） C01（2）
IPC小类 B01J（2）
IPC B01J019/12（2）
发明人 KIM H（2）
公开年 2013（2）
申请年 2012（2） 
专利权人

Manufacturing boron-doped reduced graphene, useful as semiconductor with p-type characteristics, comprises adding boron oxide to graphene oxide, removing solvent from resulting solution to obtain solid mixture, and heating the solid mixture.

KIM H, DA YOUNG Y, PARK M, LIM S H, GON S J, LEE S S

Manufacture of graphene/carbon nanotube nano structure involves preparing and irradiating graphite and compound of catalyst metal and ionic liquid with microwave.

OH I, SRIDHAR V, KIM H, OH I K, VADAHANAMBI S, KIM H J