国家/地区 韩国（6）
IPC部 B（6）
IPC大类 B01（6） C01（6）
IPC小类 B01J（6）
IPC B01J019/18（6）
发明人 YANG W S（3）
公开年 2017（3） 2018（2）
申请年 2016（6）
专利权人 KOREA ELECTR.（3）

Producing high purity highly crystalline reduction graphene oxidation of silicon comprises graphite oxidation step of injecting and oxidizing graphite in Kuett-Taylor reactor, forming oxide graphene.

YANG W S

Preparing oxidized graphene, comprises injecting and oxidizing graphite in Couette-Taylor reactor, and converting oxidized graphite into graphene oxide by introducing oxidized graphite in Couette-Taylor reactor to peel off oxidized graphene.

YANG W S

Manufacture of graphene involves reacting graphite, acid solution and oxidizing agent, obtaining product comprising graphite oxide, washing with washing liquid containing sulfite-containing compound, obtaining graphene oxide, and reducing.

SON J I, PARK H B, LEE C H

Graphene synthesis device used for synthesizing graphene wire, has thermal conversion unit that is provided close to center portion of chamber, and catalyst that is placed on thermal conversion unit and formed as thin and long metal.

WON D K, YUAN D

Graphene dispersion sol useful as coating agent of heat-radiating film, comprises graphene particles, cationic surfactant, anionic surfactant, and solvent comprising ketone-based/propanol-based solvents.

KIM K T

Increasing reactivity of two-dimensional material used in manufacture of graphene oxide, involves applying pressure to end portions of layers of material having average interlayer distance less than distance between layers end portions.

PARK W K, YANG W S, KIM H K