国家/地区 中国（3） 美国（3）
IPC部 C（5）
IPC大类 C23（5）
IPC小类 C23C（5） B01J（2） C01B（2）
IPC C23C016/54（5）
发明人 LIU Z（2） WANG J（2） WANG W（2）
公开年 2014（5）
申请年 2013（3）  2014（2） 
专利权人 CHINESE ACAD.（2）

Method for synthesizing graphene thin film using chemical vapor deposition, involves positioning separator material adjacent to or in relationship with substrate to form composite, where composite is winded to provide coiled substrate.

LI X, WU J, NING H

Graphene vapor deposition device has reaction cavity whose end portion is provided with sample inlet and outlet, and driving device which drives base portion from sample inlet into reaction cavity through sample outlet.

LIU Z, WANG J, WANG W

Continuous fast growing graphene vapor deposition device comprises reaction chamber, driving base body, furnace body, sample inlet and sample outlet.

LIU Z, WANG J, WANG W

Nanosynthesis apparatus, useful for nanosynthesizing graphene, comprises outer tube having internal surface, inner tube partially disposed within outer tube, deposition fluid source in fluid communication with gap, and heater.

HART A J, POLSEN E

Graphene synthesizer used for synthesizing graphene, comprises heater unit for applying heat to continuous catalytic metal thin film, susceptor unit arranged between catalytic metal thin film and heater, and source material supply unit.

YOON J, YOON J H