国家/地区 韩国（2） 美国（2） 世界知识产权组织（2）
IPC部 B（3）
IPC大类 B01（3）
IPC小类 B01J（3）
IPC C01B003/00（3）
发明人
公开年 2012（2）
申请年
专利权人

Making doped single graphene sheets involves oxidizing graphite to non-electrically conductive graphite oxide followed by exfoliating in solvent, depositing metal or metal oxides, and reducing to electrically conductive graphene sheets.

DO I, DRZAL L T, MONGA A

Manufacture of graphene for fabricating graphene semiconductor device, involves contacting reaction gas for graphene growth on substrate surface, heating substrate, and growing graphene.

LEE K, CHOI I, LEE K J, CHOI I S, JAE L G, SEONG C I

Preparing graphene sheet, useful in e.g. electrical device, comprises forming film comprising graphitizing catalyst, heat-treating gaseous carbon source in presence of the catalyst to form graphene, and cooling graphene to form sheet.

CHOI J, SHIN H, YOON S, CHOI J Y, SHIN H J, YOON S M, IN Z