国家/地区 中国（3）
IPC部 B（3）
IPC大类 B01（3）
IPC小类 B01D（3）
IPC B01D053/02（2） B01J020/20（2） B01J020/30（2）
B82Y040/00（2） C01G041/02（2）
发明人 ZHANG H（3）
公开年 2017（3）
申请年 2017（3） 
专利权人 AECC BEIJING.（2）

Preparing hollow structure nano tungsten oxide by in-situ growth of graphene oxide involves weighing certain amount of oxidized graphene and tungsten-containing precursor compound, mixing graphene oxide and adding absolute ethyl alcohol.

CUI Y, GAO J, GUO M, TANG Z, TIAN H, WANG C, ZHANG H, ZHOU Z

Preparing hollow nanostructure tungsten oxide wire involves mixing certain amount of graphene oxide, tungsten-containing precursor compound, anhydrous ethanol and deionized water with stirring uniformly for predetermined time.

CUI Y, GAO J, GUO M, TANG Z, TIAN H, WANG C, ZHANG H, ZHOU Z

Preparing silicon carbide-graphene composite powder comprises e.g. either mixing expanded graphite with silicon containing raw material, ball milling to obtain composite powder and then heating the composite powder.

ZHANG H, WANG H, BI Y, HAN L, LI S, WANG J, ZHANG S