国家/地区 韩国（2）
IPC部 B（2）
IPC大类 B01（2） C01（2）
IPC小类 B01J（2）
IPC C01B031/02（2）
发明人
公开年 2014（2）
申请年
专利权人 KOREA INST SCI TECHNOLOGY（2）

Manufacture of high quality graphene for high quality graphene film and electronic material, involves filling carbon rod, graphite powder and metal catalyst, filling buffer gas into reaction chamber, and evaporating in reaction chamber.

KIM M J, OH I S, KU B C

Manufacture of doped graphene for manufacturing semiconductor, involves mixing graphite powder and acid solution, oxidizing, drying, impregnating graphite oxide solid to organic compound aqueous solution, microwave heating and reducing.

LEE S S, KIM H, PARK M, LIM S H, GON S J, KWANG H L, KIM T A