国家/地区 韩国（2） 美国（2） 世界知识产权组织（2）
IPC部 B（2）
IPC大类 B01（2）
IPC小类 B01J（2）
IPC B01J013/00（2）
发明人
公开年
申请年 2012（2）
专利权人

Manufacture of graphene oxide reduced material for forming electrode for silicon-based semiconductor, involves synthesizing graphite oxide flakes from graphite flakes and forming graphene oxide dispersion solution.

JEONG S, LEE G, HAN J, JEONG H, KIM S, HAN J T, JEONG H J, JEONG S Y, KIM S H, LEE G W

Synthesizing graphene comprises refluxing reaction mixture of solvent e.g. water and carbonaceous material promoting polycyclic aromatic hydrocarbon formation, collecting and directing obtained vapors to substrate and recovering graphene.

SHANKMAN R S, HANKMAN R S