国家/地区 中国（2）
IPC部 B（2）
IPC大类 B22（2）
IPC小类 B22D（2）
IPC
发明人 LUO M（2）
公开年
申请年
专利权人

Normally-closed gallium nitride integrated device of large threshold voltage used in mobile phone, has sub-gate composed of gate layer connected through graphene film electrode to form series-parallel mixed double high frequency characteristics high electron mobility transistor integrated structure.

LUO M, CHENG T, WANG X, ZU Y, YU C

Preparing graphene-reinforced aluminum-based composite material based on inkjet printing technology comprises e.g. washing graphene with alkali and acid, soaking in electroless plating solution and performing surface modification treatment.

ZHU D, YANG L, LIU Y, LUO M, ZHENG Z, CHEN W