国家/地区 美国（7）
IPC部 B（7）
IPC大类 B32（7） C23（7） B82（6）
C01（6） H01（3） B05（2）
IPC小类 B32B（7）
IPC C23C016/26（7）
发明人
公开年 2012（4） 2011（3）
申请年 2011（7）
专利权人

Method for transferring layer of graphene from transitional metal substrate onto target substrate, involves conforming layer of graphene to target substrate to form graphene on substrate assembly by applying hydrostatic pressure.

YAGER T A

Graphene coated sheet for surface-treated steel plate used in e.g. car material, has graphene layer that is formed on steel sheet structure.

HWANG C C, JUNG Y G, HWANG H N, JEONG J I, YANG J H, JUNG Y, JEONG J, YANG J, HWANG H, HWANG C, GUK H C, IN J J, HUN Y J, GYUN J Y, NA H H

Manufacture of graphene nano belt for electric component, involves preparing single atom layer and forming layer on insulating substrate, and directly growing.

CHEN J, DING G, JIANG M, TANG S, WANG C, XIE X

Method of directly synthesizing uniform multilayer graphene of semiconductor device, involves passing reaction gas into reaction chamber, after temperature in reaction chamber reaches specific level.

ZHONG Z, LEE S, LEE K

Manufacturing graphene comprises preparing a subject substrate, forming a metal thin film, supplying a carbon source material, heating, diffusing carbon atoms, and forming graphene on the subject substrate.

KWON S, PARK K, YOON E, KWAK J, KWON S Y, YOON U

Electromagnetic interference shielding method for electronic/electrical machinery and apparatus e.g. TV, involves forming graphene on outer side portion or inner side portion of graphene growth supporter by using chemical deposition process.

BAE S K, CHOI J, HONG B H, KANG J, KIM H K, KIM Y J, BUNG C J, GANG B S, GEUN K H, HUI H B, JIN K Y, MO G J, BAE S, KIM H

Carbon-film laminate used for graphene-based electronic device, has monocrystal substrate, copper single-crystal thin film epitaxially grown on substrate, and graphene formed on copper single-crystal thin film.

HASEGAWA MASATAKA, ISHIHARA MASATOU, KOGA YOSHINORI, KIM JAEHO, TSUGAWA KAZUO, IIJIMA SUMIO, HASEGAWA M, ISHIHARA M, KOGA Y, KIM J, TSUGAWA K, IIJIMA S, YOSHINORI K, HO K J, KAZUO T, SUMIO I, MASATAKA H, MASATOU I, JAEHO K