国家/地区 欧洲专利局（EPO）（2）
IPC部 C（2）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC
发明人 ZHANG H（2）
公开年
申请年
专利权人 UNIV NANYANG.（2）

Chemical vapor deposition process for forming foam-like structure, involves causing decomposition of organometallic compound vapor into metal particles, and precursor gasses into graphene domains and/or hexagonal-boron nitride domains.

LOEBLEIN M, TSANG S H, TEO H T E, TSANG S, ZHANG H

Preparing graphene-metal chalcogenide porous material used in e.g. water treatment, involves adding metal precursor and chalcogenide precursor to dispersion comprising graphene oxide, heating obtained mixture and freeze-drying gel.

ZHANG H, BI H, CHEN B, MA Q