国家/地区 美国（5） 世界知识产权组织（3）
IPC部 B（5）
IPC大类 B82（5） C01（5） H01（5）
C23（2）
IPC小类 B82Y（5）
IPC B82Y010/00（5）
发明人
公开年 2014（5）
申请年 2013（4） 
专利权人

Graphene device has insulating layer which is provided between graphene layer and gate electrode, and semiconductor substrate is provided with tunable Schottky barrier formed by junction of source electrode, graphene layer and substrate.

CHUNG H, SEO D, PARK S, BYUN K, SONG H, YANG H, HEO J, CHUNG H J, PARK S J, BYUN K E, SONG H J, YANG H J, HEO J S

Fabrication of graphene nanoribbon array for fabrication of e.g. field-effect transistor device, involves forming graphoepitaxy channel on graphene substrate, and forming layer of surface-modifying copolymer on channel.

ARNOLD M S, GOPALAN P, SAFRON N S, KIM M, CHOI J W

Preparing carbon nanotube-graphene composite, comprises inserting carbon nanotube chemical vapor deposition catalyst between stacked graphene sheets, heating nanotube chemical vapor deposition catalyst, growing and cooling carbon nanotubes.

HE P

Fabricating graphene film for forming graphene based device e.g. dielectric capacitor, by heating substrate at specific temperature in chamber, introducing carbon source into the chamber and cooling substrate to room temperature.

OZKAN C S, OZKAN M, GUVENC A B, PAUL R K, LIN J, GHAZINEJAD M, PENCHEV M, GUO S, ZHONG J, HAYASHI K

Forming metal nanoparticle-graphene composite as electrocatalyst to form an electrode of fuel cell, comprises mixing metal precursor with graphite oxide, exfoliating the graphite oxide and reducing the metal precursor in formed mixture.

SUNDARA R, PARAMBATH V B, NAGAR R