国家/地区 美国（2） 世界知识产权组织（2）
IPC部 B（2）
IPC大类 B32（2） B82（2） C01（2）
C23（2） H01（2）
IPC小类 B32B（2）
IPC B82Y040/00（2）
发明人
公开年
申请年 2011（2） 
专利权人 EMPIRE TECHNOLOGY DEV LLC（2）

Partially altering defect area in layer on substrate, comprises receiving the layer including graphene and some defect areas in graphene, and exposing the layer to gas including hydrogen, boron, aluminum, gallium, indium and/or thallium.

MILLER S, MILLER S A

Method for transferring layer of graphene from transitional metal substrate onto target substrate, involves conforming layer of graphene to target substrate to form graphene on substrate assembly by applying hydrostatic pressure.

YAGER T A