国家/地区 韩国（2）
IPC部 B（2）
IPC大类 B41（2）
IPC小类 B41M（2）
IPC C01B031/02（2）
发明人 KIM S（2）
公开年 2014（2）
申请年 2013（2） 
专利权人

Controlling method of graphene thickness used for e.g. manufacturing semiconductor device, involves ion-implanting carbon atoms in metal, heating carbon atoms-implanted metal, cooling, and growing graphene on metal.

CHOI S H, KIM S, LEE J S

Graphene structure used in transparent electrode for display device or solar cell, comprises graphene doped with dopant, and hydrophobic organic layer on at least one surface of doped graphene.

YOON S, SHIN H, CHOI J, CHOI W, KIM S, LEE Y, CHOI J Y, CHOI W M, KIM S M, LEE Y H, SHIN H J, YOON S M, YOONSUNMI, HEE L