国家/地区 中国（2）
IPC部 C（2）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC C23C014/18（2）
发明人
公开年
申请年
专利权人

Method of making a pellicle for use in extreme ultraviolet (EUV) lithography system, by depositing graphene layer over first material layer, and depositing amorphous silicon layer over graphene layer.

TU C, CHEN C, YOO C S, CHANG J, TSAI C, LIU P, LEE H, LIN C, LIN Y, TU Z, CHEN J, CAI J, YOU Q, ZHANG Z, LIN Z, LIU B, LI X, YOO C

Making strip shaped graphene layer used in semiconductor devices e.g. sensor, involves providing carbon nanotube structure comprising film on substrate surface, implanting carbon ions into substrate, and annealing substrate to obtain layer.

LIN X, JIANG K, FAN S