国家/地区
IPC部 C（2）
IPC大类 C04（2）
IPC小类 C04B（2）
IPC C04B035/565（2）
发明人
公开年 2013（2）
申请年 2011（2） 
专利权人

Manufacture of graphene on polycrystalline silicon carbide used as bearing element in mechanical engineering, involves polishing silicon carbide components, cleaning, and graphitizing polished surface by annealing.

BENNEWITZ R, ASLAN M, WAEHLISCH C F

Metamaterial dielectric substrate has nano silicon carbide ceramic layer having content of boron and content of carbon of specified range, graphite powder and graphene layer.

BOCANEGRA A M L, LIN Y, LIU R, MIAO X, YI X, ZHAO Z