国家/地区 中国（5）
IPC部 C（5）
IPC大类 C04（5）
IPC小类 C04B（5）
IPC C01B031/04（2） C04B035/628（2） C04B041/50（2）
C23C016/26（2）
发明人
公开年 2012（2） 2013（2）
申请年 2012（5）
专利权人

Method for growing noble metal nanocrystal on graphene oxide involves mixing graphene oxide and oil suspension of amine, preheating, adding noble metal precursor, increasing temperature, separating solid product, washing, and drying.

XU T, XU P, YU H, LI X

Graphene load porous ceramic electrically conductive material preparation method, involves reducing porous ceramic material surface with layer of metal, and obtaining conductive material by chemical vapor deposition process in furnace.

BI H, HUANG F, ZHOU M

Preparation of graphene-based nanosilver composite, involves adding graphene oxide to water/organic solvent mixture, ultrasonically dispersing, adding silver nitrate solution, reflux-reacting, filtering, washing, and drying.

WANG M, RAN C, GAO Y

Method for non-destructively transferring graphene, involves nondestructively combining graphene coated with media with target substrate, and removing media to transfer graphene to target substrate nondestructively.

REN W, GAO L, MA L, CHENG H

Structural graphene production on silicon carbide substrate for manufacturing microelectronic devices includes depositing layer of silicon dioxide as mask, coating mask surface, and exposing to form structured pattern.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F