国家/地区 中国（2）
IPC部 C（2）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC
发明人
公开年 2017（2）
申请年
专利权人

Processing method for growing metal-doped graphene, involves performing plasma enhanced chemical vapor deposition process with carbon precursor, metal precursor, and predetermined element precursor to form metal-doped graphene.

HUANG K, CHI Y, JI Y

Preparing coiled continuous graphene film involves subjecting polyimide film to corona treatment, winding film into coil, and carbonizing under protection of inert gas to form carbon precursor.

LIU P