国家/地区 美国（2） 世界知识产权组织（2）
IPC部 C（2）
IPC大类 C23（2）
IPC小类 C23C（2）
IPC
发明人
公开年 2021（2）
申请年 2020（2）
专利权人

Infrared photodetector has mesa on substrate and comprising layer of amorphous silicon for amplifying photocurrent, layer of long wave infrared radiation absorbing material for producing photocurrent, and passivation layers.

LO Y, ZHOU J, MIAH M A R, ZHANG Y

System for growing crystalline material, has optical emission spectrometer (OES) that controls parameter in closed loop and maintains required proposition of plasma constituent for growth of crystalline materials in microwave plasma reactor.

SHARDA T, BHANDARI R, RAJNEESH B, TARUN S