国家/地区 中国（3）
IPC部 C（3）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC
发明人 LIN H（3）
公开年 2018（3）
申请年 2017（3）
专利权人 HENAN GRAPHE.（2）

Device for producing graphene, has procesed mixed slurry comprising graphite and surfactant, received mixed slurry in accommodating groove, pressurizing unit is communicating with accommodating groove, provided pushing force.

SONG J, LIU J, WANG S, WANG H, ZANG B, LIN Y, LIN H

Method for producing large-area graphene, involves lowering penetrating rate continuously, so that carbon source penetrating substrate forms re-crystallization and precipitates.

SONG J, LIU J, WANG S, WANG H, ZANG B, LIN Y, LIN H

Manufacturing method of capacitors, supercapacitors, and electrodes, involves irradiating graphene oxide with beam of light or radiation to form reduced graphene oxide in three-dimensional pattern.

LIN H, JIA B