国家/地区 美国（2）
IPC部 C（2）
IPC大类 C04（2） H01（2）
IPC小类 C04B（2）
IPC H01L021/20（2）
发明人
公开年 2010（2）
申请年
专利权人

Synthesis of graphene involves implanting carbon in metal substrate via ion implantation, annealing with implanted carbon, cooling, transferring with graphene layer into dielectric layer, and removing metal substrate.

COLOMBO L, WALLACE R M, RUOFF R S

Forming graphene layer used in e.g. transistors, solar panels, involves mixing carbon source with molten solvent, precipitating carbon source from solvent to form graphite layer, and separating graphite layer into several graphene layers.

SUNG C, HU S C, LIN I, YU C, SONG J