国家/地区 美国（4）
IPC部 C（4）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC B32B009/00（2） C01B032/182（2） C01B032/186（2）
C01B032/194（2） C30B029/02（2）
发明人
公开年 2022（3）
申请年 2022（4）
专利权人

System for realizing formation of high throughput and high yield graphene for use in applications such as batteries, ultra-capacitors and fuel-cells, has gas distribution subsystem for dispensing annealing gas composition to inner side of processing sub-enclosure.

PHILPOTT R, BARAKET M, SHERRILL V

Graphene composite comprises substrate, first thin film positioned on substrate, and second thin film positioned on first thin film, where first thin film includes graphene and second thin film includes at least any one of vanadium selenide, vanadium disulfide, vanadium ditelluride, tantalum sulfide.

CHOI B K, CHANG Y J, JANG Y

Metal-graphene composite comprises metal layer and graphene layer provided by growing directly on one surface of metal layer, where graphene layer contains two and/or more graphene thin, metal layer is copper, nickel, cobalt, iron, manganese, chromium, vanadium, titanium, platinum, gold and aluminum.

KIM D J, HONG B H, WOO Y S, KIM D, YU Y S

Upper electrode assembly used in plasma processing apparatus, has heat transfer sheet that is mounted between electrode plate and metal plate and having vertically oriented portion with vertically oriented graphene structures.

TSUJIMOTO H, KOBUNE T, LI L, LEE L, KOBUNEDAKAKI