国家/地区 中国（3）
IPC部 C（3）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC C01B032/186（3）
发明人 XIE G（3）
公开年 2023（3）
申请年 2022（3） 
专利权人 UNIV SOUTHWE.（3）

Reaction furnace for graphene, has baffle that blocks gas to advance when placing chamber is not provided with growth module, and growth module that lifts baffle plate, so that airflow is discharged through exhaust port.

XIE G, XIA L, BAI Y

Device for growth of graphene comprises reactor, detection chamber, gas mixer, adsorption sieve body and vacuum pump, where reactor is provided with multiple groups of growth substrate for growth, graphene side of reactor is connected.

BAI Y, WANG R, XIE G

Chemical vapor deposition method graphene reaction furnace, has gas distributor densely distributed with exhaust holes, where included angle between central line of exhaust hole and side wall of funnel-shaped connecting part is smaller.

BAI Y, FU L, XIE G