国家/地区 韩国（2） 美国（2）
IPC部 B（3） C（3）
IPC大类 B01（3）
IPC小类 B01J（3）
IPC B01J019/10（3）
发明人
公开年 2013（3）
申请年 2012（2） 
专利权人

Manufacture of graphene oxide reduced material for forming electrode for silicon-based semiconductor, involves synthesizing graphite oxide flakes from graphite flakes and forming graphene oxide dispersion solution.

JEONG S, LEE G, HAN J, JEONG H, KIM S, HAN J T, JEONG H J, JEONG S Y, KIM S H, LEE G W

Reforming method of graphene used for manufacturing composite nanomaterial, involves dispersing graphene into alcohol, stirring and heating dispersed graphene under presence of highly-acidic catalyst.

KWAK S B, RAK L S, RYUL J S, YUN L S, EON M S, SANG H D, MO J H, MIN O S, MIN O G, LEE S R, JU S R, LEE S Y, MOON S E, HAN D S, JEONG H M, OH S M, OH K M

Producing chemically functionalized nano graphene material involves mixing starting nano graphene material, azide/bi-radical compound, and organic solvent in reactor and allowing chemical reaction between the material and the azide compound.

ZHAMU A, JANG B Z