国家/地区 美国（2）
IPC部 B（2） C（2）
IPC大类 B01（2）
IPC小类 B01J（2）
IPC B01J019/10（2）
发明人
公开年 2013（2）
申请年 2012（2） 
专利权人

Manufacture of graphene oxide reduced material for forming electrode for silicon-based semiconductor, involves synthesizing graphite oxide flakes from graphite flakes and forming graphene oxide dispersion solution.

JEONG S, LEE G, HAN J, JEONG H, KIM S, HAN J T, JEONG H J, JEONG S Y, KIM S H, LEE G W

Producing chemically functionalized nano graphene material involves mixing starting nano graphene material, azide/bi-radical compound, and organic solvent in reactor and allowing chemical reaction between the material and the azide compound.

ZHAMU A, JANG B Z