国家/地区 中国（2） 美国（2）
IPC部 C（4）
IPC大类 C23（4）
IPC小类 C23C（4） H01L（3） C01B（2）
IPC C23C016/27（4）
发明人
公开年 2021（2） 2022（2）
申请年 2021（4）
专利权人

Preparation of gallium nitride epitaxial structure by providing a silicon carbide substrate, pre-processing, growing a graphene film, growing diamond film, growing aluminum nitride polycrystalline film, and annealing.

PAN Y, FENG H, TANG J

Preparing diamond-multilayer graphene composite cathode material e.g. used in emission display, involves grinding silicon substrate in diamond powder uniformly and compactly, putting grinded silicon substrate into suspension liquid made of diamond powder.

LIU H, GUAN L, WANG B, ZHANG W, XIONG Y

Transistor pathogen virus detector for detection of SARS-COV2 virus, comprises substrate layer, silicon dioxide layer, nanocrystalline diamond layer, graphene oxide layer, fluorinated graphene oxide portions, and linker layer.

KOVI K K, SCHIRMANN E, KHAN A

Method for manufacturing diamond-graphene hybrid thermal management material, involves converting predetermined thickness of partial area of one side or both sides of diamond base material into vertical graphene, where diamond base material serves as heat spreader.

JU H, LEE J K, SU J