国家/地区 中国（2） 韩国（2） 美国（2）
IPC部 C（3）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC C01B031/02（3） C23C016/26（3） B82Y030/00（2）
B82Y040/00（2） C01B031/04（2） C30B029/02（2）
发明人
公开年 2011（3）
申请年 2011（3）
专利权人

Preparation of sulfur-doped graphene thin film by heating and preprocessing metal substrate in atmosphere of reduction protective gas, vacuuming container, and introducing mixed liquid of carbon source and sulfur source.

GAO H

Carbon-film laminate used for graphene-based electronic device, has monocrystal substrate, copper single-crystal thin film epitaxially grown on substrate, and graphene formed on copper single-crystal thin film.

HASEGAWA MASATAKA, ISHIHARA MASATOU, KOGA YOSHINORI, KIM JAEHO, TSUGAWA KAZUO, IIJIMA SUMIO, HASEGAWA M, ISHIHARA M, KOGA Y, KIM J, TSUGAWA K, IIJIMA S, YOSHINORI K, HO K J, KAZUO T, SUMIO I, MASATAKA H, MASATOU I, JAEHO K

Manufacturing graphene sheet used as electrode material, involves growing graphene sheet on graphene growth support by applying carbon sources and heat; and forming ripple on the sheet by cooling the graphene growth support and sheet.

AHN J, HONG B, KIM K, AHN J H, HONG B H, KIM K S