国家/地区 中国（2）
IPC部 C（2） H（2）
IPC大类 C23（2）
IPC小类 C23C（2）
IPC C23C016/40（2）
发明人
公开年
申请年
专利权人

Preparing single crystal substrate comprises forming gallium nitride porous layer on surface of sapphire substrate, depositing barrier layer e.g. silica to cover top surface of the porous layer, removing barrier layer, performing epitaxial growth of single crystal layer and separating.

LU J

Preparing two-dimensional compound semiconductor thin film useful in micro-nano electronic device, comprises placing insulating substrate with single-layer two-dimensional layered material/metal oxide film vertical heterostructure on surface in heating device, and introducing carrier gas.

SHI Z, ZHANG C, ZHU H, WU T, GAO B