国家/地区 中国（3）
IPC部 B（3）
IPC大类 C23（3）
IPC小类 C23C（3）
IPC C23C016/06（3）
发明人
公开年 2023（2）
申请年 2022（3）
专利权人

Normally-closed gallium nitride integrated device of large threshold voltage used in mobile phone, has sub-gate composed of gate layer connected through graphene film electrode to form series-parallel mixed double high frequency characteristics high electron mobility transistor integrated structure.

LUO M, CHENG T, WANG X, ZU Y, YU C

Method for manufacturing substrate of metal composite radiating material, involves attaching metal layer on surface of heat graphene sheet after through hole is opened to obtain graphene of metal-based radiating material.

SUN H, ZHOU B, TANG Z, LI F

Conductive pre-coating useful for e.g. fuel cell titanium plate, comprises first metal particle layer distributed on surface of titanium substrate, in-situ oxidation layer covering surface of first metal particle layer, and second metal layer covering surface of in-situ oxidation layer.

LAN S, HU P, JIANG T, BI F, LI H