国家/地区
IPC部 C（2）
IPC大类 C30（2）
IPC小类 C30B（2）
IPC C30B023/02（2）
发明人
公开年
申请年 2015（2）
专利权人

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M

Preparing germanium quantum dot used in photodetector element, by cleaning substrate to remove contaminants, transferring single atomic graphene layers on cleaned substrate and growing germanium quantum dot on graphene layer.

YANG Y, WANG R, ZHANG Z, ZHANG J