国家/地区 中国（2）
IPC部 C（3）
IPC大类 C30（3）
IPC小类 C30B（3）
IPC C30B025/00（3）
发明人
公开年 2016（2）
申请年 2015（3）
专利权人

Preparation of large size single crystal graphene, involves using making copper foil into cavity structure, heat-treating copper cavity with hydrocarbon as carbon source and growing large size single crystal graphene.

BAI X, CAO S, CHEN X, GUO L, WANG L

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M

Preparing large single crystals of graphene involves annealing copper substrate in low reducing atmosphere to obtain copper substrate and then treating copper substrate with triazine derivative in steam atmosphere.

LIN L, LIU Z, PENG H, REN H