国家/地区 美国（2）
IPC部 C（3）
IPC大类 C30（3）
IPC小类 C30B（3）
IPC C30B025/10（3）
发明人
公开年 2014（3）
申请年 2013（2） 
专利权人

Method for growing graphene layer on metal foil for e.g. forming field-effect transistor, involves positioning foil in vessel placed in chamber, introducing hydrogen, annealing foil, introducing methane and depositing carbon on foil.

ZHOU C, ZHANG Y, ZHANG L

Growing etching free graphene useful in transparent semiconductor device, comprises preparing a structure comprising conductive metal oxide layer formed on a substrate and exposing structure to gas and growing graphene on layer by heating.

CHOI J W

Single-crystal nitrogen-functionalized graphene nano-flake, useful in a multilayer composite for a polymer electrolyte membrane fuel cell, comprises specified amount of functionalized nitrogen.

MEUNIER J, BERK D, VASILICA PRISTAVITA R, BINNY D, MENDOZA GONZALEZ N, PASCONE P, VASILICA P R, MENDOZA G N