国家/地区 日本（2）
IPC部 B（2）
IPC大类 B01（2）
IPC小类 B01J（2）
IPC C01B031/02（2）
发明人
公开年 2015（2）
申请年 2014（2） 
专利权人

Manufacture of monocrystal graphene film for semiconductor device, involves forming polycrystalline graphene on substrate using hydrocarbon gas, growing graphene film, forming catalyst, heating and recrystallizing.

HWANG C, HWANG C Y

Composition, used in a phase change material which is useful e.g. as thermal conductivity substrate for flexible graphene electronic devices, as electrode in battery, and in a thermal storage device, comprises galactitol and mannitol.

DA SILVA A K, FLEMING E, SHI L, BIELAWSKI C W, RUOFF R S, WEN S, JI H, PETTES M, PAUL A, PAEK E, PAK A J, SELLAN D P, FLAMING E, DA SILVAA A K