国家/地区 美国（2）
IPC部 B（2） C（2） H（2）
IPC大类 B32（2）
IPC小类 B32B（2）
IPC B44C001/22（2）
发明人
公开年
申请年
专利权人

Method for transferring layer of graphene from transitional metal substrate onto target substrate, involves conforming layer of graphene to target substrate to form graphene on substrate assembly by applying hydrostatic pressure.

YAGER T A

Forming a single or few layer graphene film, useful as e.g. transistor device, comprises forming graphene film on substrate, coating film with protective support layer and etching surface of substrate to release film and protective layer.

CECCO A, DRESSELHAUS M, KONG J, CECCO A R, DRESSELHAUS M S