国家/地区 韩国（4） 美国（2） 世界知识产权组织（2）
IPC部 B（4）
IPC大类 B01（4） B82（4） C01（4）
IPC小类 B01J（4）
IPC B01J019/12（4）
发明人 KIM H（3） KIM H J（2） OH I（2）
OH I K（2）
公开年 2014（2）
申请年 2012（4）
专利权人 KOREA ADV IN.（2） KOREA ADVANC.（2）

Manufacture of doped graphene for manufacturing semiconductor, involves mixing graphite powder and acid solution, oxidizing, drying, impregnating graphite oxide solid to organic compound aqueous solution, microwave heating and reducing.

LEE S S, KIM H, PARK M, LIM S H, GON S J, KWANG H L, KIM T A

Hierarchical structure of graphene-carbon nanotubes is obtained by growing graphene into carbon nanotubes having hierarchical structure by adding metal nanoparticles on graphene, and is metal-functionalized by metal precursor.

BAE S, KIM H, OH I, BAE S H, KIM H J, OH I K

Manufacture of graphene/carbon nanotube nano structure involves preparing and irradiating graphite and compound of catalyst metal and ionic liquid with microwave.

OH I, SRIDHAR V, KIM H, OH I K, VADAHANAMBI S, KIM H J

Surface modification of graphene oxide for e.g. sensor lamp, involves forming graphene oxide-polymer nanocomposite by dispersing catalyst mix containing monomer and catalyst in slurry containing graphene oxide dispersed in organic solvent.

YOON K R, PARK M S