国家/地区 韩国（2）
IPC部 B（2）
IPC大类 B82（2） C01（2）
IPC小类 B82B（2）
IPC B82B003/00（2） C01B031/02（2）
发明人 KIM H（2）
公开年 2014（2）
申请年
专利权人 KOREA INST SCI TECHNOLOGY（2）

Manufacture of doped graphene for manufacturing semiconductor, involves mixing graphite powder and acid solution, oxidizing, drying, impregnating graphite oxide solid to organic compound aqueous solution, microwave heating and reducing.

LEE S S, KIM H, PARK M, LIM S H, GON S J, KWANG H L, KIM T A

Making nanoparticles of target material, involves mixing graphene oxide with aqueous solvent to give aqueous solution, mixing target material with organic solvent to give organic solution, and mixing aqueous solution with organic solution.

LIM J A, SONG Y, HONG J, YOO D Y, KIM H, SONG Y W, HONG J M, KIM H S