国家/地区 韩国（2）
IPC部 B（2） C（2）
IPC大类 B01（2） C01（2）
IPC小类 B01J（2）
IPC B01J019/10（2）
发明人 KIM S H（2）
公开年 2013（2）
申请年 2012（2）
专利权人

Preparing graphene oxide that is useful in e.g. transistor, comprises e.g. diluting washed graphite oxide with excess of deionized water and then filtrating using filter, and vacuum drying filtered graphite oxide and heating.

PARK H, KIM S H

Manufacture of graphene oxide reduced material for forming electrode for silicon-based semiconductor, involves synthesizing graphite oxide flakes from graphite flakes and forming graphene oxide dispersion solution.

JEONG S, LEE G, HAN J, JEONG H, KIM S, HAN J T, JEONG H J, JEONG S Y, KIM S H, LEE G W