国家/地区 中国（2）
IPC部 C（2）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC C01B032/186（2）
发明人 ZHANG C（2）
公开年
申请年 2021（2）
专利权人

Preparing patterned graphene, comprises forming accommodating passage in silicon carbide base, providing catalyst and insulating substrate, placing catalyst in accommodating passage, and placing sandwich structure in heating device.

GAO B, ZHANG C, GU J, WU T, ZHU H

Preparing small-size graphene comprises adding copper chloride, potassium salt mixture and compound additives into water, copper plating, heating, placing in mixed acid solution and in sulfuric acid solution, respectively and filtering.

HE B, ZHANG C, LIU Q, LI P