国家/地区 中国（4）
IPC部 C（4）
IPC大类 C01（4） C09（2）
IPC小类 C01B（4）
IPC C01B032/186（4）
发明人
公开年 2022（3）
申请年 2021（4）
专利权人

Use of nitrogen-doped graphene metal material in heat-conducting field where nitrogen-doped metal graphene comprises metal base material and nitrogen-doped graphene.

WU Q, MA Y

Semiconductor refrigerating graphene comprises ceramic substrate, where upper part of ceramic substrate provided with graphene PN junction, where PN graphene comprises left and right adjacent S end and D end.

HAO Z, DAI D, CAI X, ZHOU Y, CAI J

Use of graphene film as high temperature resistant thermal interface material or heat dissipation film material.

CHENG H, LIU H, MA C, REN W

Multi-tube device for preparing graphene, has corundum tube for passing through multiple groups of heating rod.

HAN Y, YU P, NI D, GAO G, LI Y, ZHANG P, CHENG J, AN X