国家/地区 台湾（2）
IPC部 C（2）
IPC大类 C01（2） H01（2）
IPC小类 C01B（2）
IPC H01L021/336（2）
发明人
公开年 2022（2）
申请年 2022（2）
专利权人

Transistor for semiconductor device, has channel layer that comprises graphene layer and hexagonal boron nitride sheets dispersed in graphene layer and arrangement directions of hexagonal boron nitride sheets that are aligned and source/drain region next to gate stack that is obtained.

CHEN Z, CHU Z, CHEN T, CHUU C

Transferring one or more nanostructures from one substrate to another substrate by applying coating of crosslinkable copolymer over one or more nanostructures on surface of substrate, heating, transferring nanostructures and copolymer onto another substrate surface, and removing copolymer.

ARNOLD M S, JACOBBERGER R M, GOPALAN P, DWYER J H