国家/地区 韩国（4）
IPC部 B（4） C（4）
IPC大类 B01（4） C01（4）
IPC小类 B01J（4）
IPC B01J019/18（4）
发明人 YANG W S（4） KIM H K（2）
公开年 2018（2）
申请年 2016（3） 
专利权人 KOREA ELECTRONICS TECHNOLOGY INST（4）

Producing high purity highly crystalline reduction graphene oxidation of silicon comprises graphite oxidation step of injecting and oxidizing graphite in Kuett-Taylor reactor, forming oxide graphene.

YANG W S

Preparing oxidized graphene, comprises injecting and oxidizing graphite in Couette-Taylor reactor, and converting oxidized graphite into graphene oxide by introducing oxidized graphite in Couette-Taylor reactor to peel off oxidized graphene.

YANG W S

Increasing reactivity of two-dimensional material used in manufacture of graphene oxide, involves applying pressure to end portions of layers of material having average interlayer distance less than distance between layers end portions.

PARK W K, YANG W S, KIM H K

Producing graphene oxide, comprises introducing graphite, oxidizing agent and acid solution into Couette-Taylor reactor, performing oxidation reaction to produce product containing oxidized graphite, and separating oxidized graphite.

KIM H K, YANG W S