国家/地区 美国（3） 中国（2） 台湾（2）
IPC部 B（3）
IPC大类 B82（3）
IPC小类 B82Y（3）
IPC B82Y040/00（3）
发明人 LIN I（3） SUNG C（3） HU S C（2）
SONG J（2） YU C（2）
公开年
申请年
专利权人 LIN I（3）

Forming graphene layer for e.g., LEDs, by mixing carbon source with horizontally oriented molten solvent, precipitating carbon source to form graphite layer across molten solvent, and separating graphite layer into a set of graphene layers.

SUNG C, HU S C, LIN I, YU C

Fabricating patterned graphene, comprises forming catalytic layer on substrate and carbon layer of e.g. iron on catalytic layer, photolithographically etching on carbon layer and heating obtained layer to form patterned graphene layer.

SUNG C, LIN I, LIN H, LIN Y, SONG J

Forming graphene layer used in e.g. transistors, solar panels, involves mixing carbon source with molten solvent, precipitating carbon source from solvent to form graphite layer, and separating graphite layer into several graphene layers.

SUNG C, HU S C, LIN I, YU C, SONG J