国家/地区 韩国（2） 世界知识产权组织（2）
IPC部 B（2）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC C01B031/02（2）
发明人 KIM T（2）
公开年 2013（2）
申请年
专利权人

Manufacture of graphene for top-gate FETs, involves forming graphene layer on base substrate, attaching target substrate onto layer, and separating graphene layer from base substrate to transfer graphene layer onto target substrate.

CHO B, KIM T, SHIN W, YOON T, BYUNG J C, TAE S Y, TAEK S K, WOO C S

Graphene-based laminate has substrate, graphene layer which is formed at upper portion of substrate, and organic dopant which is formed on surface(s) of substrate.

KIM H, KIM T, YANG W, KIM H K, KIM T Y, YANG W S