国家/地区 中国（2） 美国（2）
IPC部 C（4）
IPC大类 C01（4） H01（3）
IPC小类 C01B（4）
IPC C01B032/182（4）
发明人 LIN C（4）
公开年 2022（2）
申请年 2017（2） 
专利权人

Semiconductor device, comprises substrate and fin structure on substrate, and includes epitaxial region, etch stop layer on epitaxial region, interlayer dielectric layer on etch stop layer, and metal contact through etch stop layer and interlayer dielectric layer.

SHEN T, HUANG J, CHEN S, LIN H, LIN C, WOON W, KHADERBAD M A

Graphene-aluminum alloy material useful in aluminum-based composite material e.g. particle reinforcing body and fiber reinforcing body, comprises silicon, iron, copper, magnesium, boron, molybdenum, graphene powder, rare earth, aluminum and impurities.

LIN C, NAN Q

Manufacturing graphene composite film, comprises e.g. preparing zeolite suspension containing zeolite nanocrystals, preparing graphene oxide suspension containing graphene oxide and mixing graphene oxide suspension with zeolite suspension.

LIN C

Preparation of high-capacity lithium battery anode, involves thermally reacting alkali source, tin source, and three-dimensional foam graphene in solution to obtain compound.

YUAN X, LI N, LIN C, SONG T, ZHANG B