国家/地区 中国（3）
IPC部 B（3）
IPC大类 B32（3）
IPC小类 B32B（3）
IPC B82Y040/00（3） C01B031/04（3） B82Y030/00（2）
发明人 LIN I（3）
公开年
申请年
专利权人 LAIZUAN CO L.（2） LIN I（2） RITEDIA CORP（2） SUNG C（2）

Fabricating graphene platelet, comprises providing highly-graphitized graphene, and providing shear force acting on graphitized graphene to separate highly-graphitized graphene into graphene platelets having single or multi-layer structure.

LIN I, LIN H, LIN Y, SONG J, SUNG C, LIN I C, SUNG C M, LIN H C

Fabricating patterned graphene, comprises forming catalytic layer on substrate and carbon layer of e.g. iron on catalytic layer, photolithographically etching on carbon layer and heating obtained layer to form patterned graphene layer.

SUNG C, LIN I, LIN H, LIN Y, SONG J

Forming graphene layer used in e.g. transistors, solar panels, involves mixing carbon source with molten solvent, precipitating carbon source from solvent to form graphite layer, and separating graphite layer into several graphene layers.

SUNG C, HU S C, LIN I, YU C, SONG J