国家/地区 中国（2） 台湾（2） 美国（2）
IPC部 C（4）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC C01B031/04（4）
发明人 WU T（4）
公开年 2014（4）
申请年 2013（2）  2014（2） 
专利权人

Manufacture of graphene flash memory involves patterning conductive layer formed on semiconductor substrate, forming source/drain electrodes, dielectric layers, graphene layer and gate electrode, and etching dielectric layers.

WANG H, JIANG M, LI L, XIE X, WU T, CHEN J, LU G, XIE H, ZHANG X

Obtaining fluorinated graphite involves irradiating gamma ray using graphene in presence of carbon tetrafluoride gas in atmosphere to obtain graphite alkene product.

CHEN L, LI J, WU F, XU Z, WU T, ZHOU B, MA M, DAN J

Preparing graphene oxide, by adding sodium nitrate into sulfuric acid, adding graphite into sodium nitrate solution in sulfuric acid, adding potassium permanganate into expanded graphite, and adding deionized water into graphite suspension.

TING J, WU T

Aligned graphene sheets-polymer composite used as e.g. thermal interface materials comprises polymer matrix, and aligned graphene sheets including graphene filament bundles disposed in the matrix, and the bundles are parallel to each other.

WU T, LIN J, CHENG T, LEE S, TSAI M, YU J, TZENG S, LIN Y