国家/地区
IPC部 B（2）
IPC大类 B01（2）
IPC小类 B01J（2）
IPC B01J003/06（2）
发明人
公开年 2022（2）
申请年
专利权人

Direct growth method of multilayer graphene through pressure heat treatment, comprises forming etch stop layer, forming metal catalyst layer, forming amorphous carbon layer and directly growing multilayer graphene on seed layer.

KIM H, KIM S K, MI K H, YOO C S, JOJINWOO, KIM H Y, JEONJUNHYUCK, YUNSUNGHO, SUNG K H, LEE S M

Graphene preparation device based on graphene coating comprises supporting mechanism, lifting mechanism, high-pressure impact mechanism, which are set at lower end of lifting mechanism, and separation oscillation mechanism set at lower end of high-pressure impact mechanism.

SONG J, LIU P, WANG D