国家/地区 韩国（4） 美国（2）
IPC部 B（4） C（4）
IPC大类 B01（4） C01（4）
IPC小类 B01J（4）
IPC B01J019/08（4）
发明人 JUNG H（4）
公开年 2014（3）
申请年 2013（3） 
专利权人 SNU R DB FO.（2） TOSHIBA SAMS.（2） UNIV DONGGUK.（2） UNIV SEOUL N.（2）

Manufacture of nitrogen-doped graphene involves adding hydroxyl radical acceptor to aqueous graphite oxide solution, adding nitrogen precursor to solution, and irradiating radiation.

JUNG H, KANG Y M, KANG M, LEE D H, JO M R, YANG J H

Apparatus for fabricating graphene comprises light source for irradiating graphite oxide layer on substrate; light source for irradiating irradiated graphite oxide layer; control unit for controlling irradiation from the light sources.

SONG B, CHOI K, CHOI N, SHIM H, JUNG H, LEE J, BYUNG Y S, KIL S C, NAG E C, HYOUNG S S, HAN Y J, JUNG H L

Fabricating graphene, i.e. an allotrope of carbon, comprises irradiating graphite oxide layer on substrate with light from first light source, and irradiating the irradiated graphite oxide layer with light from second light source.

SONG B, CHOI K, CHOI N, SHIM H, JUNG H, LEE J, BYUNG Y S, KIL S C, NAG E C, HYOUNG S S, HAN Y J, JUNG H L

Producing graphene used for nanoelectronics, sensors, batteries, super capacitors and hydrogen storage applications, comprises mixing and irradiating hydroxyl radical receptor in a solution of graphene oxide.

JUNG H, KANG M G, KWON M J, LEE D H