国家/地区 韩国（3）
IPC部 B（3）
IPC大类 B01（3） C01（3） H01（2）
IPC小类 B01J（3）
IPC B01J019/10（3）
发明人
公开年 2014（3）
申请年 2013（2） 
专利权人

Manufacture of high quality graphene for high quality graphene film and electronic material, involves filling carbon rod, graphite powder and metal catalyst, filling buffer gas into reaction chamber, and evaporating in reaction chamber.

KIM M J, OH I S, KU B C

Manufacture of graphene oxide complex for electrode, involves applying ultrasound to mix of graphene oxide dispersed solution and nickel hydroxide precursor solution, such that nickel hydroxide is provided between graphene oxide layers.

KIM J, JIN J, JEON S, YOU H

Fabricating single-layer graphene on silicon carbide wafer used as channels of field-effect transistor array, comprises disposing graphene layers on carbon buffer layer of wafer, and converting buffer layer to single-layer graphene.

WOO Y, YOON S, SHIN H, LEE D, CHOI J, WOO Y S, YOON S M, SHIN H J, LEE D W, CHOI J Y